Synthesis, characterization, and thermal properties of silicon(IV) compounds containing amidinate ligands as CVD precursors

<p>The title compounds of the type R-C(=N<sup><i>i</i></sup>Pr) (-N′ <sup><i>i</i></sup>PrSiMe<sub>3</sub>) (with R = Me or <sup><i>n</i></sup>Bu) as potential chemical vapor deposition (CVD) precursors have been synthesized and characterized by <sup>1</sup>H, <sup>13</sup>C, and <sup>29</sup>Si NMR spectroscopy as well as by EI-MS and elemental analysis where necessary. Thermal properties, including stability, volatility, transport behavior, and vapor pressure, were evaluated by thermogravimetric analysis to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which qualitatively verified the ability of these compounds as CVD precursors.</p>